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The GBSE (gate boost solar engine) The Gate Boost SE uses a 1381, a 2N7000 MOSFET and a 2N3906 with a unique voltage doubler to increase the voltage applied to the gate of the MOSFET. Normally the 2.6V output of a 1381C is barely able to turn on the 2N7000. As a result the "on resistance" of the MOSFET is high and much power is wasted. The 2N7000 works very well with 5V or 6V gate drive and then has an "on resistance " of a few ohms. The Gate Boost SE uses a voltage doubler to pump up the voltage of the 0.22 uF capacitor after the 1381C has triggered. How it works Because of the low leakage current of the 1381 (1 to 5uA), the voltage on the .22uF capacitor now decays towards the reset level of the 1381 at about 2.5V at which point the MOSFET turns off and the whole SE resets and starts charging the main capacitor again. The result is an SE that applies a voltage of 2xV(trigger) to the MOSFET gate when triggered. That gate voltage decays to V (reset) in a few seconds and the cycle repeats. Compare this with the action of a Miller SE which applies only 1xV(trigger) to the gate which then decays to 0V in a few seconds. According to some reports, a photodiode in series with the gate increases the gate voltage by 0.5V and shows inproved performance. But the rapid decay of the gate voltage to 0V make the marriage of a Miller SE and a MOSFET less than a happy one.
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